- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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533
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 11 Amp Power MDmesh | 30 V | Through Hole | TO-247-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 11 A | 400 mOhms | Enhancement | ||||||
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127
In-stock
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IXYS | MOSFET DIODE Id24 BVdass800 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | Enhancement | HyperFET | |||||
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20
In-stock
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IXYS | MOSFET 24 Amps 800V 0.4 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | 5 V | 105 nC | Enhancement | PolarHV, HiPerFET | |||
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47
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 800 V | 23 A | 400 mOhms | 4 V | 150 nC | Enhancement | POWER MOS 8 | |||||
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VIEW | IXYS | MOSFET 24 Amps 800V 0.4 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | 100 nC | Enhancement | HyperFET |
