- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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702
In-stock
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Fairchild Semiconductor | MOSFET 800V 23A N-Channel SuperFET II MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 23 A | 220 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET II | |||
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70
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 18 A | 420 mOhms | 2.5 V | 122 nC | Enhancement | |||||
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68
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 7 A | 1.5 Ohms | 2.5 V | 43 nC | Enhancement | |||||||
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5
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 41 A | 190 mOhms | 2.5 V | 260 nC | Enhancement | |||||
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VIEW | Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 31 A | 210 mOhms | 2.5 V | 303 nC | Enhancement |
