- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,332
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
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2,800
In-stock
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IR / Infineon | MOSFET MOSFT 200V 14A 235mOhm 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 200 V | 14 A | 165 mOhms | 25 nC | Enhancement | ||||||
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6,773
In-stock
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IR / Infineon | MOSFET MOSFT 200V 0.6A 2200mOhm 3.9nC | 30 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 600 mA | 2.2 Ohms | 3.9 nC | Enhancement | |||||
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1,824
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 14 A | 235 mOhms | 25 nC | Enhancement | |||||
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1,957
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
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3,000
In-stock
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IR / Infineon | MOSFET MOSFT 200V 9.4A 380mOhm 18nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.4 A | 380 mOhms | 18 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET MOSFT 200V 44A 54mOhm 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | ||||||
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1,006
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 9.4 A | 380 mOhms | 18 nC | Enhancement | |||||
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376
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 5 V | 60 nC | Enhancement | ||||
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323
In-stock
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IR / Infineon | MOSFET MOSFT 200V 31A 82mOhm 70nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 200 V | 31 A | 82 mOhms | 70 nC | Enhancement | ||||||
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238
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 30 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | |||||
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343
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 100mOhms 57nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 100 mOhms | 57 nC | Enhancement | |||||
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131
In-stock
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IR / Infineon | MOSFET MOSFT 200V 65A 26mOhm 70nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement |