- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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16,840
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | QFET | |||
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1,900
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19 A | 170 mOhms | Enhancement | QFET | ||||
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1,823
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 19.4 A | 150 mOhms | Enhancement | QFET | ||||
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1,503
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 28 A | 82 mOhms | Enhancement | QFET | ||||
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748
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9.5 A | 360 mOhms | Enhancement | QFET | ||||
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1,334
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Ch MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 9.5 A | 360 mOhms | Enhancement | QFET | ||||
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333
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 11.8 A | 150 mOhms | Enhancement | QFET | ||||
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330
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 32 A | 82 mOhms | Enhancement | QFET | ||||
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186
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 65 A | 32 mOhms | Enhancement | QFET | ||||
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134
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 28 A | 82 mOhms | Enhancement | QFET |