- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,324
In-stock
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Fairchild Semiconductor | MOSFET 250V 3.1A 2.1Ohm P-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 3.1 A | 2.1 Ohms | Enhancement | QFET | ||||
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GET PRICE |
3,478
In-stock
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Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 9.4 A | 620 mOhms | Enhancement | QFET | ||||
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GET PRICE |
1,096
In-stock
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Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 6 A | 620 mOhms | Enhancement | QFET | ||||
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GET PRICE |
1,261
In-stock
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Fairchild Semiconductor | MOSFET -250V Single | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 550 mA | 4 Ohms | Enhancement | |||||
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GET PRICE |
411
In-stock
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Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 9.4 A | 620 mOhms | Enhancement | |||||
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GET PRICE |
438
In-stock
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Fairchild Semiconductor | MOSFET P-CH/250V/6A/0.62OHM, Y-formed lead | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 6 A | 480 mOhms | - 5 V | 29 nC | Enhancement | QFET | ||
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GET PRICE |
347
In-stock
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Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | P-Channel | - 250 V | - 10.5 A | 620 mOhms | Enhancement | QFET |
