- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,860
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STMicroelectronics | MOSFET N-Ch 620V 3 Ohm 2.2A SuperMESH 3 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 620 V | 2.2 A | 3.6 Ohms | 15 nC | Enhancement | ||||
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86,222
In-stock
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STMicroelectronics | MOSFET N-channel 620V, 2.7A SuperMESH Mosfet | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 620 V | 2.7 A | 2.5 Ohms | 13 nC | Enhancement | |||
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VIEW | STMicroelectronics | MOSFET N-Ch 620V 0.98 ohm 6.2A SuperFREDmesh3 | 30 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 620 V | 6.2 A | 1.15 Ohms | 4.5 V | 34 nC | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 620V 1.28 Ohm SuperMESH3 4.3A | 30 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 620 V | 4.2 A | 1.6 Ohms | 26 nC | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 620V 2.5 Ohm SuperMESH3 3 Ohm RDS | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 620 V | 2.5 A | 2.5 Ohms | 3.75 V | 17 nC |
