- Mounting Style :
- Package / Case :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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276
In-stock
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IXYS | MOSFET 600V 26A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | Enhancement | HyperFET | |||||
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30
In-stock
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IXYS | MOSFET 26.0 Amps 600 V 0.27 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | 5 V | 72 nC | Enhancement | PolarHV | |||
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120
In-stock
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IXYS | MOSFET 600V 26A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 26.0 Amps 600 V 0.27 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 26.0 Amps 600 V 0.27 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | 5 V | 72 nC | Enhancement | PolarHV |
