- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,360
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 6.7A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.7 A | 650 mOhms | 4 V | 12 nC | CoolMOS | ||||
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220
In-stock
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Fairchild Semiconductor | MOSFET 600V 9A N-Chan FRFET UniFET | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 9 A | 650 mOhms | 5 V | 31 nC | UniFET FRFET | ||||||
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407
In-stock
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onsemi | MOSFET NFET 600V 10A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 650 mOhms | 47 nC | ||||||
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GET PRICE |
23,550
In-stock
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onsemi | MOSFET 600V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 650 mOhms | Enhancement | |||||
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86,520
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 650 mOhms | Enhancement |
