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Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFA14N60P
1+
$3.340
10+
$2.840
100+
$2.460
250+
$2.340
RFQ
190
In-stock
IXYS MOSFET 600V 14A 30 V SMD/SMT TO-263-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 14 A 550 mOhms     Enhancement HyperFET
IXFH14N60P
1+
$3.900
10+
$3.310
100+
$2.870
250+
$2.720
RFQ
100
In-stock
IXYS MOSFET 600V 14A 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 14 A 550 mOhms     Enhancement HyperFET
IXTP14N60P
1+
$3.080
10+
$2.610
100+
$2.270
250+
$2.150
RFQ
79
In-stock
IXYS MOSFET 14.0 Amps 600 V 0.55 Ohm Rds 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 14 A 450 mOhms 5.5 V 36 nC Enhancement PolarHV
IXTQ14N60P
1+
$3.420
10+
$2.910
100+
$2.520
250+
$2.390
RFQ
66
In-stock
IXYS MOSFET 14.0 Amps 600 V 0.55 Ohm Rds 30 V Through Hole TO-3P-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 14 A 450 mOhms 5.5 V 36 nC Enhancement PolarHV
IXTA14N60P
1+
$3.150
10+
$2.680
100+
$2.330
250+
$2.210
RFQ
40
In-stock
IXYS MOSFET 14.0 Amps 600 V 0.55 Ohm Rds 30 V SMD/SMT TO-263-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 14 A 450 mOhms 5.5 V 36 nC Enhancement PolarHV
IXFA14N60P3
1+
$2.810
10+
$2.390
100+
$2.070
250+
$1.970
RFQ
40
In-stock
IXYS MOSFET Polar3 HiPerFETs MOSFET w/Fast Diode 30 V SMD/SMT TO-263-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 14 A 540 mOhms 3 V to 5 V 25 nC Enhancement HyperFET
IXFP14N60P
250+
$2.260
500+
$2.030
1000+
$1.710
2500+
$1.630
VIEW
RFQ
IXYS MOSFET 600V 14A 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 14 A 550 mOhms     Enhancement HyperFET
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