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Rds On - Drain-Source Resistance :
Qg - Gate Charge :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFH30N60P
1+
$6.970
10+
$6.300
25+
$6.010
100+
$5.220
RFQ
130
In-stock
IXYS MOSFET 600V 30A 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 30 A 240 mOhms     Enhancement HyperFET
IXTH30N60P
1+
$6.930
10+
$6.260
25+
$5.970
100+
$5.180
RFQ
20
In-stock
IXYS MOSFET 30.0 Amps 600 V 0.24 Ohm Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 30 A 240 mOhms 5 V 82 nC Enhancement PolarHV
IXTQ30N60P
1+
$6.570
10+
$5.940
25+
$5.660
100+
$4.920
RFQ
18
In-stock
IXYS MOSFET 30.0 Amps 600 V 0.24 Ohm Rds 30 V Through Hole TO-3P-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 30 A 240 mOhms     Enhancement  
APT28F60B
1+
$8.420
10+
$7.580
25+
$6.900
50+
$6.430
RFQ
22
In-stock
Microsemi MOSFET Power FREDFET - MOS8 30 V Through Hole TO-247-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 30 A 170 mOhms   140 nC Enhancement  
IXFT30N60P
90+
$6.320
120+
$5.490
270+
$5.240
510+
$4.780
VIEW
RFQ
IXYS MOSFET 600V 30A 30 V SMD/SMT TO-268-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 30 A 240 mOhms     Enhancement HyperFET
IXTT30N60P
30+
$7.470
120+
$6.480
270+
$6.190
510+
$5.650
VIEW
RFQ
IXYS MOSFET 30.0 Amps 600 V 0.24 Ohm Rds 30 V SMD/SMT TO-268-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 30 A 240 mOhms 5 V 82 nC Enhancement PolarHV
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