- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
12 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,975
In-stock
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STMicroelectronics | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 4 V | 54 nC | Enhancement | |||||
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605
In-stock
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Fairchild Semiconductor | MOSFET 600V NChannel MOSFET SupreMOS | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 36 A | 90 mOhms | 4 V | 86 nC | SupreMOS | |||||
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869
In-stock
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Fairchild Semiconductor | MOSFET 600V NChannel MOSFET SupreMOST | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 36 A | 90 mOhms | 4 V | 112 nC | ||||||
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342
In-stock
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Fairchild Semiconductor | MOSFET 600V, 47A, SuperFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 79 mOhms | 4 V | 187 nC | SuperFET | |||||
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4,634
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 11.3A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11.3 A | 360 mOhms | 4 V | 22 nC | CoolMOS | |||||
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615
In-stock
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STMicroelectronics | MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 110 mOhms | 4 V | 54 nC | Enhancement | |||||
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382
In-stock
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Fairchild Semiconductor | MOSFET SupreMOS 13A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13 A | 258 mOhms | 4 V | 30.4 nC | SupreMOS | |||||
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412
In-stock
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Fairchild Semiconductor | MOSFET SUPREMOS 22A-TO247 | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 140 mOhms | 4 V | 45 nC | SupreMOS | ||||||
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2,360
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 6.7A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 6.7 A | 650 mOhms | 4 V | 12 nC | CoolMOS | |||||
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1,074
In-stock
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Toshiba | MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6 A | 1.25 Ohms | 4 V | 16 nC | Enhancement | |||||
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47,050
In-stock
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Toshiba | MOSFET MOSFET N-ch 600V 10A | 30 V | Through Hole | TO-220FP-3 | 1 Channel | Si | N-Channel | 600 V | 10 A | 750 mOhms | 4 V | 25 nC | |||||||||
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VIEW | Fairchild Semiconductor | MOSFET 600V, 20A, SUPERFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 198 mOhms | 4 V | 72 nC | SuperFET |