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IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename
IXFK60N55Q2
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IXYS MOSFET 60 Amps 550V 0.09 Rds 30 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 60 A 88 mOhms Enhancement HyperFET
IXFX60N55Q2
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IXYS MOSFET 60 Amps 550V 0.09 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 60 A 88 mOhms Enhancement HyperFET
IXFB72N55Q2
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IXYS MOSFET 72 Amps 550V 0.07 Rds 30 V Through Hole PLUS-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 72 A 72 mOhms Enhancement HyperFET
IXFN72N55Q2
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IXYS MOSFET 72 Amps 550 V 0.07 Rds 30 V Chassis Mount SOT-227-4 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 72 A 72 mOhms Enhancement HyperFET
IXFH36N55Q
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IXYS MOSFET 36 Amps 550V 0.16 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 36 A 160 mOhms Enhancement HyperFET
IXFH36N55Q2
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IXYS MOSFET 36 Amps 550V 0.16 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 36 A 180 mOhms Enhancement HyperFET
IXFH26N55Q
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IXYS MOSFET 26 Amps 550V 0.23 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 26 A 230 mOhms Enhancement HyperFET
IXTQ24N55Q
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IXYS MOSFET 24 Amps 550V 0.270 Rds 30 V Through Hole TO-3P-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 24 A 270 mOhms Enhancement  
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