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Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
NDF08N60ZG
1+
$1.180
10+
$1.010
100+
$0.772
500+
$0.682
RFQ
385
In-stock
onsemi MOSFET 600V 0.95 OHM TO- 220FP 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 7.5 A 950 mOhms 4.5 V 39 nC  
FQPF8N60C
1+
$1.530
10+
$1.310
100+
$1.000
500+
$0.884
RFQ
9,855
In-stock
Fairchild Semiconductor MOSFET 600V N-Ch Q-FET advance C-Series 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 7.5 A 1.2 Ohms     Enhancement
FQP8N60C
1+
$1.380
10+
$1.180
100+
$0.904
500+
$0.799
RFQ
126
In-stock
Fairchild Semiconductor MOSFET 600V N-Ch Q-FET advance C-Series 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 7.5 A 1.2 Ohms     Enhancement
STP9NK70Z
2000+
$0.644
10000+
$0.620
VIEW
RFQ
STMicroelectronics MOSFET N-Ch 700 Volt 7.5 A Zener SuperMESH 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 700 V 7.5 A 1.2 Ohms     Enhancement
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