MOSFET - Kaimeite

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IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	NDD02N60Z-1G	1+ $0.620 10+ $0.509 100+ $0.328 1000+ $0.263		PDF RFQ	1,473 In-stock	onsemi	MOSFET NFET IPAK 600V 2.2A 4.8R	30 V	Through Hole	TO-247-3	- 55 C	+ 125 C	Tube	1 Channel	Si	N-Channel	600 V	1.4 A	4 Ohms	4.5 V	10.1 nC
	IXTY1R4N60P	1+ $1.120 10+ $0.952 100+ $0.732 500+ $0.647		PDF RFQ	277 In-stock	IXYS	MOSFET 1.4 Amps 600 V 8 Ohm Rds	30 V	SMD/SMT	TO-252-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	1.4 A	9 Ohms			Enhancement
	IXTP1R4N60P	1+ $1.150 10+ $0.980 100+ $0.753 500+ $0.666		PDF RFQ	266 In-stock	IXYS	MOSFET 1.4 Amps 600 V 8 Ohm Rds	30 V	Through Hole	TO-220-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	1.4 A	9 Ohms	5.5 V	5.2 nC	Enhancement	PolarHV
	STFW1N105K3	1+ $3.150 10+ $2.680 100+ $2.330 250+ $2.210		PDF RFQ	600 In-stock	STMicroelectronics	MOSFET N-Ch 1050V 8 Ohm 1.4 A SuperMESH3(TM)	30 V	Through Hole	TO-3PF-3	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	1050 V	1.4 A	8 Ohms	3 V	13 nC	Enhancement	SuperMesh

NDD02N60Z-1G

NDD02N60Z-1G

onsemi

MOSFET NFET IPAK 600V 2.2A 4.8R

Stock : 1,473

1+: $0.620

10+: $0.509

100+: $0.328

1000+: $0.263

IXTY1R4N60P

IXTY1R4N60P

IXYS

MOSFET 1.4 Amps 600 V 8 Ohm Rds

Stock : 277

1+: $1.120

10+: $0.952

100+: $0.732

500+: $0.647

IXTP1R4N60P

IXTP1R4N60P

IXYS

MOSFET 1.4 Amps 600 V 8 Ohm Rds

Stock : 266

1+: $1.150

10+: $0.980

100+: $0.753

500+: $0.666

STFW1N105K3

STFW1N105K3

STMicroelectronics

MOSFET N-Ch 1050V 8 Ohm 1.4 A SuperMESH3(TM)

Stock : 600

1+: $3.150

10+: $2.680

100+: $2.330

250+: $2.210

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