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- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,000
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Chan MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 69 mOhms | Enhancement | ||||||
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1,520
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Ch MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 44 A | 69 mOhms | Enhancement | ||||||
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7,220
In-stock
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Fairchild Semiconductor | MOSFET Single N-Ch 500V .12Ohm SMPS | 30 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 120 mOhms | Enhancement | ||||||
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511
In-stock
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IXYS | MOSFET 500V 44A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | Enhancement | HyperFET | |||||
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232
In-stock
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IXYS | MOSFET 44 Amps 800V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 190 mOhms | Enhancement | HyperFET | |||||
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113
In-stock
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IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 44 A | 220 mOhms | 6.5 V | 305 nC | Enhancement | Polar, HiPerFET | |||
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1,498
In-stock
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Infineon Technologies | MOSFET 200V SINGLE N-CH 55mOhms 91nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 55 mOhms | 5.5 V | 91 nC | Enhancement | ||||
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798
In-stock
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Fairchild Semiconductor | MOSFET TO220F, 250V, NCH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 58 mOhms | 5 V | 47 nC | Enhancement | UniFET | |||
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5,290
In-stock
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IR / Infineon | MOSFET MOSFT 250V 44A 46mOhm 72nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 46 mOhms | 72 nC | Enhancement | |||||
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384
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | |||||
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GET PRICE |
8,500
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 44A 54mOhm 60nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET MOSFT 200V 44A 54mOhm 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | ||||||
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807
In-stock
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IXYS | MOSFET 44 Amps 100V 25.0 Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 85 V | 44 A | 22 mOhms | 4.5 V | 33 nC | Enhancement | TrenchMV | |||
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112
In-stock
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IXYS | MOSFET 500V 44A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | Enhancement | HyperFET | |||||
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376
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 5 V | 60 nC | Enhancement | ||||
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52
In-stock
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IXYS | MOSFET 44 Amps 800V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 190 mOhms | 5 V | 198 nC | Enhancement | PolarHV, HiPerFET | |||
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91
In-stock
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IXYS | MOSFET 500V 44A | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | Enhancement | HyperFET | |||||
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250
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 44 A | 32 mOhms | 60 nC | Enhancement | |||||
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238
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 30 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | |||||
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30
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/44A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 190 mOhms | 185 nC | HyperFET | |||||||
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19
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/44A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | 93 nC | HyperFET | |||||||
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10
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/44A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 190 mOhms | 185 nC | HyperFET | |||||||
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29
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/44A | 30 V | Through Hole | PLUS-264-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 44 A | 220 mOhms | 264 nC | HyperFET | ||||||
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26
In-stock
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IXYS | MOSFET 44 Amps 500V 0.14 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/44A | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 44 A | 140 mOhms | 93 nC | HyperFET |
