- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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702
In-stock
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Fairchild Semiconductor | MOSFET 800V 23A N-Channel SuperFET II MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 23 A | 220 mOhms | 2.5 V | 78 nC | Enhancement | SuperFET II | ||
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GET PRICE |
989
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 23 A | 190 mOhms | Enhancement | UniFET | ||||
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451
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 23A 90mOhm 37nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 23 A | 90 mOhms | 37 nC | |||||||
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GET PRICE |
255
In-stock
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Infineon Technologies | MOSFET MOSFT 150V 23A 90mOhm 37nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 23 A | 90 mOhms | 5.5 V | 37 nC | Enhancement | |||
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18
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/23A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 23 A | 350 mOhms | 195 nC | HyperFET | |||||
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10
In-stock
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IXYS | MOSFET 26 Amps 1200V | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 23 A | 460 mOhms | Enhancement | HyperFET | ||||
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GET PRICE |
47
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 800 V | 23 A | 400 mOhms | 4 V | 150 nC | Enhancement | POWER MOS 8 | ||||
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VIEW | IXYS | MOSFET 26 Amps 1000V 0.39 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 23 A | 390 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 23 Amps 600V 0.32 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23 A | 320 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 23 Amps 600V 0.320 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 23 A | 320 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 23 Amps 800V 0.40 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 23 A | 420 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 23 Amps 800V 0.40W Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 23 A | 420 mOhms | Enhancement |
