Build a global manufacturer and supplier trusted trading platform.
Package / Case :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
FQU2N90TU_WS
GET PRICE
RFQ
5,610
In-stock
Fairchild Semiconductor MOSFET 900V 1.6A 7.8Ohm N-Channel 30 V Through Hole TO-251-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 1.7 A 7.2 Ohms     Enhancement  
FQD2N90TM
GET PRICE
RFQ
300,300
In-stock
Fairchild Semiconductor MOSFET 900V N-Channel QFET 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 900 V 1.7 A 7.2 Ohms     Enhancement  
IPD60R3K3C6ATMA1
GET PRICE
RFQ
5,500
In-stock
Infineon Technologies MOSFET N-Ch 650V 1.7A DPAK-2 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 1.7 A 3.3 Ohms 3 V 4.6 nC   CoolMOS
Page 1 / 1