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- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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476
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V Slow version | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 600 V | 37 A | 87 mOhms | 3.5 V | 114 nC | Enhancement | SuperFET II | |||
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GET PRICE |
275
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 600V Slow version | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 600 V | 37 A | 87 mOhms | 3.5 V | 114 nC | Enhancement | SuperFET II | |||
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57
In-stock
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IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 37 A | 220 mOhms | 6.5 V | 305 nC | Enhancement | Polar, HiPerFET | ||
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71
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1000 V | 37 A | 290 mOhms | 4 V | 305 nC | Enhancement | POWER MOS 8 | |||
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78
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 37 A | 130 mOhms | 4 V | 145 nC | Enhancement | POWER MOS 8 | ||||
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GET PRICE |
9
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 37 A | 330 mOhms | 4 V | 305 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/37A | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 800 V | 37 A | 165 mOhms | 185 nC | HyperFET | |||||||
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VIEW | IXYS | MOSFET 70 Amps 600V | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 37 A | 92 mOhms | Enhancement | HyperFET |
