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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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65,920
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 31A 82mOhm 70nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 31 A | 82 mOhms | 5.5 V | 70 nC | Enhancement | ||
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425
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 31 A | 57 mOhms | Enhancement | ||||
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434
In-stock
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Infineon Technologies | MOSFET 200V SINGLE N-CH 82mOhms 70nC | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 31 A | 82 mOhms | 70 nC | Enhancement | |||
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GET PRICE |
323
In-stock
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IR / Infineon | MOSFET MOSFT 200V 31A 82mOhm 70nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 200 V | 31 A | 82 mOhms | 70 nC | Enhancement | ||||
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5
In-stock
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Microsemi | MOSFET Power MOSFET - MOS7 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 31 A | 120 mOhms | 3 V | 215 nC | Enhancement | |||
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VIEW | Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 31 A | 210 mOhms | 2.5 V | 303 nC | Enhancement |
