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Package / Case :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
FCD5N60_F085
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RFQ
2,434
In-stock
Fairchild Semiconductor MOSFET Automotive / SuperFET1 / 600V / 4.6A / 1.05 OHM 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 4.6 A 3.2 Ohms 3 V 16 nC Enhancement SuperFET
FCD5N60TM
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RFQ
3,302
In-stock
Fairchild Semiconductor MOSFET 650V SUPERFET 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 4.6 A 810 mOhms     Enhancement SuperFET
FCD5N60TM_WS
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RFQ
2,490
In-stock
Fairchild Semiconductor MOSFET 600V 4.6A N-Channel 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 600 V 4.6 A 950 mOhms     Enhancement SuperFET
IRFU220BTU_AM002
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RFQ
4,520
In-stock
Fairchild Semiconductor MOSFET N-Ch 200V 4.6A 0.8OHM 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 200 V 4.6 A 800 mOhms        
FCU5N60TU
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RFQ
4,980
In-stock
Fairchild Semiconductor MOSFET 600V N-Channel MOSFET 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 4.6 A 810 mOhms     Enhancement  
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