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- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
1,046
In-stock
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onsemi | MOSFET NFET TO220FP 600V 4. | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.8 A | 1.8 Ohms | 3 V | 29 nC | Enhancement | |||
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GET PRICE |
1,950
In-stock
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onsemi | MOSFET NFET 600V 4A 1.8 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.8 A | 2 Ohms | 3.9 V | 19 nC | ||||
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GET PRICE |
76
In-stock
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IXYS | MOSFET 5 Amps 500V 1.3 Ohms Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.4 Ohms | 5.5 V | 12.6 nC | Enhancement | PolarHV | ||
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GET PRICE |
30
In-stock
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IXYS | MOSFET 4.8 Amps 500V 1.4 Ohms Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.4 Ohms | Enhancement | |||||
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VIEW | IXYS | MOSFET 4.8 Amps 500V 1.4 Ohms Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.8 A | 1.4 Ohms | 5.5 V | 12.6 nC | Enhancement | PolarHV |
