1 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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Toshiba | MOSFET DTMOSIV-H/S 600V 65mOhmmax(VGS=10V) | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 38.8 A | 55 mOhms | 3.5 V | 85 nC | Enhancement |
