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Vds - Drain-Source Breakdown Voltage :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Tradename
IPL60R650P6SATMA1
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2,360
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Infineon Technologies MOSFET N-Ch 600V 6.7A ThinPAK 5x6 30 V SMD/SMT ThinPAK-56-8 - 40 C + 150 C Reel 1 Channel Si N-Channel 600 V 6.7 A 650 mOhms 4 V 12 nC CoolMOS
IPL65R650C6SATMA1
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RFQ
2,065
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Infineon Technologies MOSFET N-Ch 650V 6.7A ThinPAK 5x6 30 V SMD/SMT ThinPAK-56-8 - 40 C + 150 C Reel 1 Channel Si N-Channel 650 V 6.7 A 650 mOhms 3 V 21 nC CoolMOS
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