- Mounting Style :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
29 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,495
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 2.75 Ohms | 3 V | 2.63 nC | Enhancement | |||||
|
5,965
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Chan UniFET | 30 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 400 V | 2 A | 2.8 Ohms | 5 V | 4.5 nC | ||||||||
|
2,000
In-stock
|
STMicroelectronics | MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 950 V | 2 A | 4.2 Ohms | 4 V | 10 nC | ||||||||
|
2,743
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.5 Ohms | 4 V | 3 nC | ||||||
|
1,079
In-stock
|
STMicroelectronics | MOSFET N-Channel 1000V Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2 A | 8.5 Ohms | 16 nC | Enhancement | ||||||
|
4,342
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 2 A | 3.4 Ohms | Enhancement | |||||||
|
1,992
In-stock
|
STMicroelectronics | MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.8 Ohms | 3.75 V | 11 nC | Enhancement | |||||
|
2,100
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.5 Ohms | 4 V | 3 nC | ||||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-Channel 1000V Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1000 V | 2 A | 8.5 Ohms | 16 nC | Enhancement | ||||||
|
3,183
In-stock
|
STMicroelectronics | MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.5 Ohms | 4.5 V | 12 nC | Enhancement | |||||||
|
20,040
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 3.5Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 3.5 Ohms | 4 V | 3 nC | ||||||
|
696
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-CH MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 2 A | 2.8 Ohms | Enhancement | |||||||
|
864
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.7 Ohms | Enhancement | QFET | ||||||
|
1,485
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.7 Ohms | Enhancement | QFET | ||||||
|
400
In-stock
|
STMicroelectronics | MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 950 V | 2 A | 4.2 Ohms | 4 V | 10 nC | ||||||||
|
838
In-stock
|
STMicroelectronics | MOSFET N-CH 950V 4.2Ohm typ 2A Zener-protected | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 950 V | 2 A | 4.2 Ohms | 4 V | 10 nC | ||||||||
|
50
In-stock
|
IXYS | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 2 A | 2.3 Ohms | 3 V | 4.3 nC | Enhancement | ||||||
|
198
In-stock
|
IXYS | MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Si | N-Channel | 650 V | 2 A | 2.3 Ohms | 3 V | 4.3 nC | Enhancement | |||||||
|
238
In-stock
|
Fairchild Semiconductor | MOSFET 700V N-Channel Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 2 A | 6.3 Ohms | Enhancement | QFET | ||||||
|
128
In-stock
|
IXYS | MOSFET 2.0 Amps 600 V 4.7 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 5.1 Ohms | 5 V | 7 nC | Enhancement | PolarHV | ||||
|
114
In-stock
|
IXYS | MOSFET 2.0 Amps 600 V 4.7 Ohm Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 5.1 Ohms | 5 V | 7 nC | Enhancement | PolarHV | ||||
|
20
In-stock
|
IXYS | MOSFET 2 Amps 800V 6 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 5 Ohms | 5.5 V | 10.6 nC | Enhancement | PolarHV | ||||
|
405
In-stock
|
Toshiba | MOSFET N-Ch MOS 2A 600V 60W 280pF 4.3 Ohm | 30 V | Through Hole | PW-Mold2-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.3 Ohms | 2.4 V | 7 nC | Enhancement | |||||
|
4,996
In-stock
|
STMicroelectronics | MOSFET N Ch 600V Zener SuprMESH 4.4 A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.8 Ohms | 11 nC | Enhancement | ||||||
|
VIEW | IXYS | MOSFET 2 Amps 800V 6 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 6 Ohms | Enhancement | |||||||
|
900
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.05 kV | 2 A | 6 Ohms | 3 V | 10 nC | Enhancement | ||||||
|
VIEW | IXYS | MOSFET 2 Amps 800V 6 Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2 A | 6 Ohms | Enhancement | |||||||
|
95,000
In-stock
|
STMicroelectronics | MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.5 Ohms | 4.5 V | 12 nC | Enhancement | |||||||
|
VIEW | STMicroelectronics | MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.8 Ohms | 11 nC | Enhancement |