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8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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431
In-stock
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Fairchild Semiconductor | MOSFET UniFET 500V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 100 A | 43 mOhms | Enhancement | UniFET | ||||||
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397
In-stock
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IXYS | MOSFET MOSFET 650V/100A Ultra Junction X2 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 100 A | 30 mOhms | 2.7 V | 180 nC | Enhancement | |||||
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95
In-stock
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IXYS | MOSFET 100 Amps 500V 0.05 Ohms Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 100 A | 49 mOhms | 5 V | 240 nC | Enhancement | PolarHV, HiPerFET | ||||
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27
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/100A | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 100 A | 49 mOhms | 255 nC | HyperFET | ||||||||
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84
In-stock
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IXYS | MOSFET MOSFET 650V/100A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 100 A | 30 mOhms | 2.7 V | 180 nC | Enhancement | |||||
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220
In-stock
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Toshiba | MOSFET DTMOSIV 600V 18mOhm 100A 800W 15000pF | 30 V | Through Hole | TO-3PL-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 100 A | 15 mOhms | 2.7 V to 3.7 V | 360 nC | DTMOSIV | |||||
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12
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 200 V | 100 A | 22 mOhms | 2 V | 435 nC | Enhancement | ||||||
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14
In-stock
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Microsemi | MOSFET Power FREDFET - MOS5 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 100 A | 22 mOhms | 4 V | 290 nC | Enhancement | Power MOS V |