- Mounting Style :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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100
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 40 A | 88 mOhms | 3 V | 89 nC | Enhancement | |||||
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82
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 40 A | 88 mOhms | 3 V | 89 nC | Enhancement | |||||
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GET PRICE |
3,010
In-stock
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onsemi | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 110 mOhms | Enhancement | QFET | ||||
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225
In-stock
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IXYS | MOSFET Polar HiperFET Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 40 A | 210 mOhms | 3.5 V to 6.5 V | 230 nC | HyperFET | ||||
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4,405
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 40 A | 70 mOhms | Enhancement | QFET | |||||
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27
In-stock
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IXYS | MOSFET 40 Amps 1100V 0.2600 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 40 A | 260 mOhms | Enhancement | HyperFET | |||||
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117
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel FRFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 110 mOhms | Enhancement | QFET | |||||
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15
In-stock
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IXYS | MOSFET 600V 48A | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 40 A | 140 mOhms | Enhancement | HyperFET | |||||
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18
In-stock
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IXYS | MOSFET 42 Amps 800V 0.15 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 40 A | 150 mOhms | 5 V | 250 nC | Enhancement | PolarHV, ISOPLUS264, HiPerFET | |||
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27
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 40 A | 210 mOhms | 3.5 V to 6.5 V | 230 nC | HyperFET | ||||
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25
In-stock
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IXYS | MOSFET | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.1 kV | 40 A | 260 mOhms | 3.5 V | 300 nC | Enhancement | HyperFET | ||||
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42
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 300 V | 40 A | 85 mOhms | 4 V | 130 nC | Enhancement | Power MOS V | ||||
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52
In-stock
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IXYS | MOSFET 500V 40A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 140 mOhms | Enhancement | HyperFET | |||||
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2,900
In-stock
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Siliconix / Vishay | MOSFET 650V Vds 250W Pd +/-30V Vds E Series | 30 V | Through Hole | TO-220AB-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 40 A | 57 mOhms | 3 V | 98 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 40 Amps 500V 0.14W Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 40 A | 140 mOhms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 Volt 40 Amp | 30 V | SMD/SMT | ISOTOP-4 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 40 A | 130 mOhms | Enhancement | ||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 40A 600V 320W 3400pF 0.08 | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 40 A | 65 mOhms | 3 V to 5 V | 55 nC | Enhancement |
