- Manufacture :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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10
In-stock
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Microsemi | MOSFET Power MOSFET - MOS7 | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 25 A | 350 mOhms | 3 V | 186 nC | Enhancement | ||||
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79
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 120 mOhms | 3 V | 60 nC | Enhancement | |||
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47
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 25 A | 310 mOhms | 3 V | 150 nC | Enhancement | ||||
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133
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 120 mOhms | 3 V | 60 nC | Enhancement | |||
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45
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 120 mOhms | 3 V | 60 nC | Enhancement |
