- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
411
In-stock
|
STMicroelectronics | MOSFET N-CH 800V 0.37Ohm 12A MDmesh K5 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 12 A | 450 mOhms | 4 V | 29 nC | ||||||
|
283
In-stock
|
IXYS | MOSFET 500V 12A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 500 mOhms | 5.5 V | 29 nC | Enhancement | Polar, HiPerFET | ||||
|
95
In-stock
|
IXYS | MOSFET 1500V High Voltage Power MOSFET | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1200 V | 12 A | 2 Ohms | 4.5 V | 106 nC | Enhancement | ||||||
|
52
In-stock
|
IXYS | MOSFET 12.0 Amps 500 V 0.5 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 500 mOhms | 5.5 V | 29 nC | Enhancement | Polar | ||||
|
752
In-stock
|
STMicroelectronics | MOSFET N-Ch 500 Volt 12 Amp | 30 V | SMD/SMT | TO-263-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 12 A | 350 mOhms | Enhancement | |||||||
|
1,900
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | H2PAK-2 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement | |||||
|
VIEW | Toshiba | MOSFET MOSFET DTMOS-II N-Ch 600V 12A | 30 V | SMD/SMT | TFP-4 | - 50 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 12 A | 400 mOhms | Enhancement |