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Minimum Operating Temperature :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
6 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP80R280P7XKSA1
1+
$3.540
10+
$3.010
100+
$2.610
250+
$2.480
RFQ
868
In-stock
Infineon Technologies MOSFET 30 V Through Hole TO-220-3 - 50 C + 150 C   1 Channel Si N-Channel 800 V 17 A 280 mOhms 3 V 36 nC Enhancement CoolMOS
IPA80R280P7XKSA1
1+
$3.540
10+
$3.010
100+
$2.610
250+
$2.480
RFQ
671
In-stock
Infineon Technologies MOSFET 30 V Through Hole TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 800 V 17 A 280 mOhms 3 V 36 nC Enhancement CoolMOS
IPW80R280P7XKSA1
1+
$4.050
10+
$3.440
100+
$2.980
250+
$2.830
RFQ
281
In-stock
Infineon Technologies MOSFET 30 V SMD/SMT TO-247-3 - 50 C + 150 C   1 Channel Si N-Channel 800 V 17 A 280 mOhms 3 V 36 nC Enhancement CoolMOS
STP24NM60N
1000+
$1.380
2000+
$1.280
5000+
$1.200
10000+
$1.150
VIEW
RFQ
STMicroelectronics MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II 30 V Through Hole TO-220-3     Tube 1 Channel Si N-Channel 650 V 17 A 168 mOhms 3 V 46 nC    
STB24NM60N
1000+
$2.730
2000+
$2.590
VIEW
RFQ
STMicroelectronics MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II 30 V SMD/SMT TO-263-3     Reel 1 Channel Si N-Channel 600 V 17 A 168 mOhms 3 V 46 nC    
IPD80R280P7ATMA1
1+
$3.350
10+
$2.850
100+
$2.470
250+
$2.350
RFQ
1,574
In-stock
Infineon Technologies MOSFET 30 V SMD/SMT TO-252-3 - 50 C + 150 C   1 Channel Si N-Channel 800 V 17 A 280 mOhms 3 V 36 nC Enhancement CoolMOS
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