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Packaging :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STW24NM60N
600+
$3.820
1200+
$3.220
3000+
$3.060
VIEW
RFQ
STMicroelectronics MOSFET N-Ch 600V 0.18 Ohm 17A MDmesh II 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 17 A 190 mOhms   46 nC Enhancement
STP24NM60N
1000+
$1.380
2000+
$1.280
5000+
$1.200
10000+
$1.150
VIEW
RFQ
STMicroelectronics MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II 30 V Through Hole TO-220-3     Tube 1 Channel Si N-Channel 650 V 17 A 168 mOhms 3 V 46 nC  
STB24NM60N
1000+
$2.730
2000+
$2.590
VIEW
RFQ
STMicroelectronics MOSFET N-Ch 600V 0.168 Ohm 17A Mdmesh II 30 V SMD/SMT TO-263-3     Reel 1 Channel Si N-Channel 600 V 17 A 168 mOhms 3 V 46 nC  
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