- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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35,648
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel PowerTrench MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 18 A | 265 mOhms | Enhancement | ||||||
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5,468
In-stock
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Fairchild Semiconductor | MOSFET UniFET 200V | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 120 mOhms | UniFET | ||||||
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GET PRICE |
35,648
In-stock
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onsemi | MOSFET 500V N-CH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 18 A | 265 mOhms | Enhancement | |||||
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2,641
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 5.5 V | 28 nC | Enhancement | ||||
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1,616
In-stock
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IXYS | MOSFET 600V 18A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 400 mOhms | Enhancement | HyperFET | |||||
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1,606
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 140 mOhms | Enhancement | UniFET | |||||
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904
In-stock
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Fairchild Semiconductor | MOSFET 200V, 18A, 140mOhm UniFET FRFET MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 18 A | 140 mOhms | 5 V | 20 nC | Enhancement | UniFET | |||
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34
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 660 mOhms | 90 nC | HyperFET | ||||||
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45
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18 A | 600 mOhms | 3 V to 6 V | 97 nC | Enhancement | HyperFET | |||
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25
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A | 30 V | SMD/SMT | TO-268-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 660 mOhms | 90 nC | HyperFET | ||||||
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142
In-stock
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IR / Infineon | MOSFET MOSFT 150V 18A 125mOhm 28nC | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 28 nC | ||||||||
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9
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 490 mOhms | 140 nC | HyperFET | |||||||
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57
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 18 A | 600 mOhms | 4 V | 150 nC | Enhancement | POWER MOS 8 | |||||
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70
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 18 A | 420 mOhms | 2.5 V | 122 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18 A | 600 mOhms | HyperFET | ||||||
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VIEW | IXYS | MOSFET 32 Amps 1000V | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 18 A | 340 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 1200V 0.35 Rds | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 18 A | 380 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 18.0 Amps 600 V 0.42 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 18 A | 420 mOhms | Enhancement | ||||||
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VIEW | Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 28 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET PLANAR_MOSFETS | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 28 nC | Enhancement |
