- Manufacture :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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198
In-stock
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Fairchild Semiconductor | MOSFET 200V N-CH U NIFET MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 70 A | 35 mOhms | Enhancement | ||||||
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9
In-stock
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IXYS | MOSFET tbd Amps 500V 0.06 Ohms Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 70 A | 52 mOhms | 5 V | 240 nC | Enhancement | PolarHV, ISOPLUS264, HiPerFET | |||
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56
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/70A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 70 A | 54 mOhms | 98 nC | HyperFET | |||||||
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34
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 200V/70A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 70 A | 40 mOhms | 67 nC | Enhancement | HyperFET | |||||
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15
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 70 A | 75 mOhms | 4 V | 330 nC | Enhancement | POWER MOS 8 | |||||
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25
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 70 A | 75 mOhms | 4 V | 330 nC | Enhancement | POWER MOS 8 | |||||
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6
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 600 V | 70 A | 90 mOhms | 4 V | 330 nC | Enhancement | ||||||
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VIEW | IXYS | MOSFET 70 Amps 600V | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 70 A | 80 mOhms | Enhancement | HyperFET |
