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Package / Case :
Vds - Drain-Source Breakdown Voltage :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
FQU3N50CTU
1+
$0.870
10+
$0.723
100+
$0.467
1000+
$0.374
RFQ
4,863
In-stock
Fairchild Semiconductor MOSFET 500V N-Channel Adv QFET C-series 30 V Through Hole TO-251-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 2.5 A 2.1 Ohms     Enhancement
STP4N52K3
1+
$1.400
10+
$1.200
100+
$0.916
500+
$0.810
RFQ
1,748
In-stock
STMicroelectronics MOSFET N-Ch 525V 2.5A 2.1 Ohm SuperMESH3 30 V Through Hole TO-220-3     Tube 1 Channel Si N-Channel 525 V 2.5 A 2.1 Ohms 3.75 V 11 nC  
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