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- Qg - Gate Charge :
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9 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,319
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel PowerTrench MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 62 A | 22.9 mOhms | Enhancement | PowerTrench | ||||
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1,121
In-stock
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Fairchild Semiconductor | MOSFET 200V N-Channel PowerTrench | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 27 mOhms | Enhancement | PowerTrench | ||||
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110
In-stock
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IXYS | MOSFET 62 Amps 500V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 62 A | 100 mOhms | 5.5 V | 550 nC | Enhancement | Linear | ||
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614
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 26mOhms | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | ||||
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347
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 62 A | 35 mOhms | Enhancement | QFET | ||||
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81,700
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 62A 26mOhm 70nC Qg | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | ||||
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45
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/62A | 30 V | Through Hole | PLUS-264-3 | Tube | 1 Channel | Si | N-Channel | 800 V | 62 A | 140 mOhms | 270 nC | HyperFET | ||||||
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25
In-stock
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IXYS | MOSFET 62 Amps 500V 0.1 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 62 A | 100 mOhms | Enhancement | |||||
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131
In-stock
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IR / Infineon | MOSFET MOSFT 200V 65A 26mOhm 70nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement |
