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- Mounting Style :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,428
In-stock
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Fairchild Semiconductor | MOSFET 500V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 500 V | - 1.5 A | 8 Ohms | Enhancement | ||||||
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GET PRICE |
32,420
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 1.0Amp Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 1 A | 8 Ohms | 7 nC | Enhancement | ||||
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2,756
In-stock
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STMicroelectronics | MOSFET N-Ch 600 Volt 1.0 A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1 A | 8 Ohms | Enhancement | ||||||
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1,216
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 1.5 A | 8 Ohms | 4 V | 10 nC | Enhancement | ||||
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600
In-stock
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STMicroelectronics | MOSFET N-Ch 1050V 8 Ohm 1.4 A SuperMESH3(TM) | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 1.4 A | 8 Ohms | 3 V | 13 nC | Enhancement | SuperMesh |
