- Manufacture :
- Mounting Style :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
798
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 21 A | 160 mOhms | Enhancement | QFET | ||||
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GET PRICE |
815
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 26 A | 160 mOhms | Enhancement | UniFET | ||||
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GET PRICE |
277
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 12 A | 160 mOhms | Enhancement | QFET | ||||
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GET PRICE |
100
In-stock
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | |||
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GET PRICE |
27
In-stock
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IXYS | MOSFET 46 Amps 500V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 46 A | 160 mOhms | 6 V | 260 nC | Enhancement | |||
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GET PRICE |
185
In-stock
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | |||
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GET PRICE |
20
In-stock
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IXYS | MOSFET 44 Amps 500V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 46 A | 160 mOhms | Enhancement | |||||
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GET PRICE |
98
In-stock
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IXYS | MOSFET MOSFET 650V/22A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 22 A | 160 mOhms | 2.7 V | 38 nC | Enhancement | |||
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GET PRICE |
65
In-stock
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Toshiba | MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 38 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET 44 Amps 500V | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 46 A | 160 mOhms | 6 V | 260 nC | Enhancement | ||||
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VIEW | IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 52 A | 160 mOhms | 3.5 V to 6.5 V | 308 nC | Enhancement | HyperFET | |||
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GET PRICE |
1,002
In-stock
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Toshiba | MOSFET N-Ch 600V 15.8A 40W DTMOSIV 1350pF 38nC | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 38 nC | Enhancement | |||||
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GET PRICE |
401
In-stock
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Toshiba | MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 30 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 38 nC | DTMOSIV | |||||
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VIEW | Toshiba | MOSFET N-Ch DTMOSIV 600 V 130W 1350pF 15.8A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 3.7 V | 38 nC | Enhancement | ||||
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GET PRICE |
9,000
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 28.4 A | 160 mOhms | Enhancement | |||||
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VIEW | IXYS | MOSFET 36 Amps 550V 0.16 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 550 V | 36 A | 160 mOhms | Enhancement | HyperFET |
