- Mounting Style :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
- Tradename :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
1,000
In-stock
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11 A | 450 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | |||
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GET PRICE |
387
In-stock
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11 A | 450 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | |||
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GET PRICE |
1,196
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 450 mOhms | 3 V | 29 nC | Enhancement | |||
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GET PRICE |
411
In-stock
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STMicroelectronics | MOSFET N-CH 800V 0.37Ohm 12A MDmesh K5 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 12 A | 450 mOhms | 4 V | 29 nC | ||||
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GET PRICE |
7
In-stock
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IXYS | MOSFET 30 Amps 1000V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 450 mOhms | Enhancement | |||||
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GET PRICE |
251
In-stock
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Fairchild Semiconductor | MOSFET 300V N-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 9 A | 450 mOhms | Enhancement | QFET | ||||
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GET PRICE |
79
In-stock
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IXYS | MOSFET 14.0 Amps 600 V 0.55 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 450 mOhms | 5.5 V | 36 nC | Enhancement | PolarHV | ||
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GET PRICE |
66
In-stock
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IXYS | MOSFET 14.0 Amps 600 V 0.55 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 450 mOhms | 5.5 V | 36 nC | Enhancement | PolarHV | ||
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GET PRICE |
40
In-stock
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IXYS | MOSFET 14.0 Amps 600 V 0.55 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 450 mOhms | 5.5 V | 36 nC | Enhancement | PolarHV | ||
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GET PRICE |
61
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 450 mOhms | 3 V | 29 nC | Enhancement | |||
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GET PRICE |
23
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 1200 V | 29 A | 450 mOhms | 4 V | 300 nC | Enhancement | POWER MOS 8 | ||||
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VIEW | IXYS | MOSFET 30 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 450 mOhms | 5 V | 545 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 Volt 11 Amp | 30 V | SMD/SMT | TO-263-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 450 mOhms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 Volt 11 Amp | 30 V | SMD/SMT | TO-263-3 | - 65 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11 A | 450 mOhms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 Volt 11 Amp | 30 V | Through Hole | TO-220-3 | - 65 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 11 A | 450 mOhms | Enhancement | ||||||
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GET PRICE |
2,430
In-stock
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Infineon Technologies | MOSFET | 30 V | SMD/SMT | TO-252-3 | - 50 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11 A | 450 mOhms | 3 V | 24 nC | Enhancement | CoolMOS |
