- Manufacture :
- Mounting Style :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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180
In-stock
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IXYS | MOSFET 500V 80A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 80 A | 65 mOhms | Enhancement | HyperFET | ||||||
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41
In-stock
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IXYS | MOSFET 500V 80A | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 66 A | 65 mOhms | Enhancement | HyperFET | ||||||
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54
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/80A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 80 A | 65 mOhms | 200 nC | HyperFET | ||||||||
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19
In-stock
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IXYS | MOSFET 500V 80A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 80 A | 65 mOhms | Enhancement | HyperFET | ||||||
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19
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A | 30 V | Chassis Mount | SOT-227-4 | Tube | 1 Channel | Si | N-Channel | 500 V | 63 A | 65 mOhms | 200 nC | HyperFET | ||||||||
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22
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 500V/80A | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 80 A | 65 mOhms | 200 nC | HyperFET | ||||||||
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20
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 65 A | 65 mOhms | 3.5 V | 230 nC | Enhancement | HiPerFET | ||||
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25
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 66 A | 65 mOhms | 3.5 V | 230 nC | Enhancement | HiPerFET | ||||
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50
In-stock
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IXYS | MOSFET 850V Ultra Junction X-Class Pwr MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 66 A | 65 mOhms | 3.5 V | 230 nC | Enhancement | HiPerFET | ||||
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28
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 84 A | 65 mOhms | 3 V | 340 nC | Enhancement | ||||||
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29
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 84 A | 65 mOhms | 4 V | 340 nC | Enhancement | |||||||
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145
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 84 A | 65 mOhms | 4 V | 340 nC | Enhancement | |||||||
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VIEW | Toshiba | MOSFET N-Ch MOS 40A 600V 320W 3400pF 0.08 | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 40 A | 65 mOhms | 3 V to 5 V | 55 nC | Enhancement |