- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
58,200
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 60A 32mOhm 60nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 60 nC | ||||||
|
|
186
In-stock
|
Fairchild Semiconductor | MOSFET 200V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 65 A | 32 mOhms | Enhancement | QFET | ||||
|
|
272
In-stock
|
Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 32mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 60 nC | Enhancement | ||||
|
|
3,000
In-stock
|
IR / Infineon | MOSFET MOSFT 100V 59A 25mOhm 76nC | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 59 A | 32 mOhms | 76 nC | |||||||
|
|
2,970
In-stock
|
Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 32mOhms 95nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 60 A | 32 mOhms | 95 nC | Enhancement |
