- Manufacture :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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40
In-stock
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IXYS | MOSFET 500V 78A 0.068Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 78 A | 68 mOhms | 5 V | 147 nC | HyperFET | ||||||
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29
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 52 A | 68 mOhms | 3 V | 113 nC | Enhancement | ||||
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21
In-stock
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IXYS | MOSFET 500V 78A 0.068Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 78 A | 68 mOhms | 5 V | 147 nC | HyperFET | ||||||
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VIEW | Toshiba | MOSFET MOSFET NChannel 068ohm DTMOS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 35 A | 68 mOhms | 2.5 V to 3.5 V | 100 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET MOSFET NChannel 068ohm DTMOS | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 35 A | 68 mOhms | 2.5 V to 3.5 V | 100 nC | Enhancement |
