Build a global manufacturer and supplier trusted trading platform.
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
FDD6N50TM
GET PRICE
RFQ
3,620
In-stock
Fairchild Semiconductor MOSFET 30V/16V 9.5/12MO NCH SINGLE 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 500 V 6 A 760 mOhms     Enhancement  
FDP7N50
GET PRICE
RFQ
988
In-stock
Fairchild Semiconductor MOSFET 500V N-CHANNEL 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 7 A 760 mOhms     Enhancement UniFET
FDD6N50TM_WS
GET PRICE
RFQ
2,310
In-stock
Fairchild Semiconductor MOSFET 500V 6A N-Channel 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 500 V 6 A 760 mOhms     Enhancement  
FDD6N50TM_F085
GET PRICE
RFQ
984
In-stock
Fairchild Semiconductor MOSFET Trans MOS N-Ch 500V 6A 3-Pin 2+Tab 30 V SMD/SMT TO-252-3 - 55 C + 150 C Reel 1 Channel Si N-Channel 500 V 6 A 760 mOhms     Enhancement  
IXFH15N100P
GET PRICE
RFQ
76
In-stock
IXYS MOSFET 15 Amps 1000V 0.76 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 15 A 760 mOhms 6.5 V 97 nC Enhancement Polar, HiPerFET
TK8A50DA(STA4,Q,M)
GET PRICE
RFQ
366
In-stock
Toshiba MOSFET N-Ch MOS 7.5A 500V 35W 700pF 1.04 Ohm 30 V SMD/SMT TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 500 V 7.5 A 760 mOhms 4.4 V 16 nC    
IXFV15N100P
GET PRICE
RFQ
39
In-stock
IXYS MOSFET 15 Amps 1000V 1 Rds 30 V Through Hole PLUS-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 15 A 760 mOhms     Enhancement HiPerFET
Page 1 / 1