- Qg - Gate Charge :
- Tradename :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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276
In-stock
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IXYS | MOSFET 600V 26A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | Enhancement | HyperFET | |||||
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450
In-stock
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IXYS | MOSFET 500V 22A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 270 mOhms | Enhancement | HyperFET | |||||
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150
In-stock
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IXYS | MOSFET 22 Amps 500V 0.27 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 270 mOhms | 5.5 V | 50 nC | Enhancement | PolarHV | |||
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30
In-stock
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IXYS | MOSFET 26.0 Amps 600 V 0.27 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 26 A | 270 mOhms | 5 V | 72 nC | Enhancement | PolarHV | |||
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19
In-stock
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IXYS | MOSFET 32 Amps 800V 0.27 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 32 A | 270 mOhms | Enhancement | HyperFET | |||||
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30
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 24 A | 270 mOhms | 4.5 V | 48 nC | Enhancement | PolarP2 | ||||
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VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/32A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 32 A | 270 mOhms | 140 nC | HyperFET |
