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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
STP11NK50Z
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RFQ
215
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STMicroelectronics MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 10 A 520 mOhms 3.75 V 49 nC Enhancement  
IXFH20N80P
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RFQ
81
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IXYS MOSFET 20 Amps 800V 0.52 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 20 A 520 mOhms 5 V 86 nC Enhancement PolarHV, HiPerFET
NDF11N50ZG
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RFQ
504
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onsemi MOSFET 500V 0.52 OHM TO- 220FP 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 12 A 520 mOhms        
IXFT20N80P
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RFQ
12
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IXYS MOSFET 20 Amps 800V 0.52 Rds 30 V SMD/SMT TO-268-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 20 A 520 mOhms 5 V 86 nC Enhancement PolarHV, HiPerFET
STP11NK50ZFP
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RFQ
103
In-stock
STMicroelectronics MOSFET N-channel 500 V Zener SuperMESH 30 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 10 A 520 mOhms   49 nC Enhancement  
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