- Manufacture :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Tradename :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Channel Mode | Tradename | |
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762
In-stock
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Infineon Technologies | MOSFET N-Ch 900V 11A TO220-3 CoolMOS C3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 11 A | 390 mOhms | Enhancement | CoolMOS | ||||
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717
In-stock
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Fairchild Semiconductor | MOSFET N-CH/500V/13A/QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 390 mOhms | Enhancement | |||||
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30
In-stock
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IXYS | MOSFET 26 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 20 A | 390 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 26 Amps 1000V 0.39 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 23 A | 390 mOhms | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 26 Amps 1000V | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 20 A | 390 mOhms | Enhancement | HyperFET |