- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
- Tradename :
12 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GET PRICE |
1,456
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Chan MOSFET UniFET-II | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 12 A | 530 mOhms | 5 V | 26 nC | UniFET | |||||
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GET PRICE |
2,766
In-stock
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Fairchild Semiconductor | MOSFET Trans N-Ch 600V 7A 3-Pin 2+Tab | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 530 mOhms | Enhancement | SuperFET | ||||
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GET PRICE |
3,238
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 6.6 A | 530 mOhms | Enhancement | |||||
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GET PRICE |
1,258
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 530 mOhms | Enhancement | SuperFET | ||||
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GET PRICE |
676
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 530 mOhms | Enhancement | SuperFET | ||||
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GET PRICE |
1,972
In-stock
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Fairchild Semiconductor | MOSFET N-CH/600V/7A SuperFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 530 mOhms | Enhancement | |||||
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GET PRICE |
1,171
In-stock
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Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | P-Channel | - 100 V | - 8 A | 530 mOhms | Enhancement | QFET | ||||
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GET PRICE |
386
In-stock
|
Fairchild Semiconductor | MOSFET 100V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | P-Channel | - 100 V | - 8 A | 530 mOhms | Enhancement | |||||
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GET PRICE |
914
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 11 A | 530 mOhms | Enhancement | QFET | ||||
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GET PRICE |
172
In-stock
|
Fairchild Semiconductor | MOSFET 400V N-Channel Advance Q-FET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 11 A | 530 mOhms | Enhancement | QFET | ||||
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GET PRICE |
175
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.8 A | 530 mOhms | 2.5 V | 16 nC | Enhancement | |||
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GET PRICE |
186
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1200 V | 29 A | 530 mOhms | 4 V | 300 nC | Enhancement |
