- Mounting Style :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
- Tradename :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,841
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 19.5 A | 260 mOhms | 4 V | 40 nC | Enhancement | |||
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GET PRICE |
977
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 260 mOhms | Enhancement | UniFET | ||||
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GET PRICE |
623
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 19.5 A | 260 mOhms | 4 V | 40 nC | Enhancement | |||
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GET PRICE |
13,782
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 20 A | 260 mOhms | Enhancement | UniFET | ||||
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GET PRICE |
686
In-stock
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Fairchild Semiconductor | MOSFET MOSFET UNIFET1 500V ,20A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 20 A | 260 mOhms | 5 V | 50 nC | Enhancement | UniFET | ||
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GET PRICE |
203
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 19.5 A | 260 mOhms | 4 V | 40 nC | Enhancement | |||
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GET PRICE |
27
In-stock
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IXYS | MOSFET 40 Amps 1100V 0.2600 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1100 V | 40 A | 260 mOhms | Enhancement | HyperFET | ||||
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GET PRICE |
194
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 260 mOhms | Enhancement | UniFET | ||||
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GET PRICE |
25
In-stock
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IXYS | MOSFET | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.1 kV | 40 A | 260 mOhms | 3.5 V | 300 nC | Enhancement | HyperFET | |||
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GET PRICE |
30
In-stock
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IXYS | MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 260 mOhms | 5 V | 50 nC | HyperFET | |||||
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GET PRICE |
43
In-stock
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IXYS | MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 28 A | 260 mOhms | 5 V | 50 nC | HyperFET | |||||
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GET PRICE |
3
In-stock
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Microsemi | MOSFET Power FREDFET - MOS7 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 38 A | 260 mOhms | 3 V | 267 nC | Enhancement | ||||
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GET PRICE |
496
In-stock
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Fairchild Semiconductor | MOSFET 600V N-CH MOSFET SuperFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 260 mOhms | Enhancement | |||||
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GET PRICE |
23,996
In-stock
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Fairchild Semiconductor | MOSFET 600V N-CH SuperFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 16 A | 260 mOhms | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch 800V 0.19 Ohm 19.5 A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 19.5 A | 260 mOhms | 4 V | 40 nC | Enhancement |
