- Manufacture :
- Mounting Style :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,579
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 1 Ohm 9A Zener MDmesh K5 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 9 A | 1.25 Ohms | 13 nC | ||||
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GET PRICE |
1,327
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 1 Ohm 9A Zener MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 9 A | 1.25 Ohms | 13 nC | ||||
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GET PRICE |
689
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 1 Ohm 9A Zener MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 9 A | 1.25 Ohms | 13 nC | ||||
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GET PRICE |
415
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 1 Ohm 9A Zener MDmesh K5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 950 V | 9 A | 1.25 Ohms | 13 nC | |||||
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GET PRICE |
786
In-stock
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STMicroelectronics | MOSFET N-channel 950 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFE... | 30 V | SMD/SMT | H2PAK-2 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 6 A | 1.25 Ohms | 3 V | 13 nC | Enhancement | ||
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1,765
In-stock
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onsemi | MOSFET NFET T0220FP 500V 5A 1.5R | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.25 Ohms | 3 V to 4.5 V | 18.5 nC | |||
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1,074
In-stock
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Toshiba | MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6 A | 1.25 Ohms | 4 V | 16 nC | Enhancement | ||
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VIEW | Toshiba | MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 8.5 A | 1.25 Ohms | Enhancement |
