- Manufacture :
- Mounting Style :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
298
In-stock
|
IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 24 A | 420 mOhms | 3.5 V to 6.5 V | 130 nC | Enhancement | HyperFET | |||
|
|
176
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 8.7A TO247-3 CoolMOS CFD2 | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | ||||||
|
|
30
In-stock
|
IXYS | MOSFET 14 Amps 800V 0.42 Rds | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 13 A | 420 mOhms | 5 V | 105 nC | Enhancement | HyperFET | |||
|
|
70
In-stock
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 18 A | 420 mOhms | 2.5 V | 122 nC | Enhancement | |||||
|
|
VIEW | IXYS | MOSFET 23 Amps 800V 0.40 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 23 A | 420 mOhms | Enhancement | HyperFET |
