- Manufacture :
- Package / Case :
- Transistor Polarity :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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411
In-stock
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Fairchild Semiconductor | MOSFET 250V P-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | P-Channel | - 250 V | - 9.4 A | 620 mOhms | Enhancement | |||||
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1,900
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | H2PAK-2 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1.2 kV | 12 A | 620 mOhms | 3 V | 44.2 nC | Enhancement |
