- Manufacture :
- Package / Case :
- Id - Continuous Drain Current :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
7 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
798
In-stock
|
Fairchild Semiconductor | MOSFET 47A, 600V SuperFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 47 A | 73 mOhms | Enhancement | SuperFET FRFET | |||||
|
GET PRICE |
49
In-stock
|
Toshiba | MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 2.7 V to 3.7 V | 86 nC | Enhancement | |||||
|
GET PRICE |
48
In-stock
|
Toshiba | MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V) | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 7.7 A | 73 mOhms | 3.5 V | 65 nC | Enhancement | |||||
|
GET PRICE |
6,000
In-stock
|
Toshiba | MOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 2.7 V to 3.7 V | 86 nC | DTMOSIV | ||||
|
GET PRICE |
24
In-stock
|
Toshiba | MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 3.5 V | 65 nC | Enhancement | ||||
|
GET PRICE |
26
In-stock
|
Toshiba | MOSFET N-Ch 30.8A 45W FET 600V 3000pF 86nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 2.7 V to 3.7 V | 86 nC | Enhancement | ||||
|
VIEW | Toshiba | MOSFET N-Ch 30.8A 230W FET 600V 3000pF 105nC | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 2.7 V to 3.7 V | 86 nC | Enhancement |